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128mx72 bits pc133 sdram registered dimm with pll, based on 64mx4 sdra m with lvttl, 4 banks & 8k refresh this document is a general product descript ion and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no pat ent licenses are implied. rev. 0.4/dec. 2002 1 hym72v12c736b(l)s4 series description the hym72v12c736b(l)s4 series are 128mx72bits ecc synchronous dram modules. the modules are composed of thirty six 64mx4bits cmos synchronous drams in 400mil 54pin tsop-ii stack package, one 2kbit eeprom in 8pin tssop package on a 168pin glass-epoxy printed circ uit board. one 0.22uf and one 0.0022uf decoupling capac- itors per each sdram are mounted on the pcb. the hym72v12c736b(l)s4 series are dual in-line memory modules suitable for easy interchange and addition of 1gbytes memory. the hym72v12c736b(l)s4 series are fully synchronous operation referenced to the positive edge of the clock . all inputs and outputs are synchronized with the rising edge of the clock input. the data paths are inter- nally pipelined to achieve very high bandwidth. features ordering information part no. clock frequency internal bank ref. power sdram package plating hym72v12c736bs4-k 133mhz 4 banks 8k normal tsop-ii gold hym72v12c736bs4-h HYM72V12C736BLS4-K low power hym72v12c736bls4-h ? pc133mhz support ? 168pin sdram registered dimm ? serial presence detect with eeprom ? 1.70? (43.18mm) height pcb with double sided components ? single 3.3 0.3v power supply ? all device pins are compatible with lvttl interface ? data mask function by dqm ? sdram internal banks : four banks ? module bank : two physical banks ? auto refresh and self refresh ? 8192 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks
pc133 sdram registered dimm rev. 0.4/dec. 2002 2 hym72v12c736b(l)s4 series pin description pin pin name description ck0 clock inputs the system clock input. all other i nputs are registered to the sdram on the rising edge of clk cke0 clock enable controls internal clock signal and when deactivated, the sdram will be one of the states among power down, suspend or self refresh /s0 ~ /s3 chip select enables or disables all inputs except ck, cke and dqm ba0, ba1 sdram bank address selects bank to be activated during /ras activity selects bank to be read/w ritten during /cas activity a0 ~ a12 address row address : ra0 ~ ra12, column address : ca0 ~ ca9, ca11 auto-precharge flag : a10 /ras, /cas, / we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function truth table for details rege register enable register enable pin which permits the dimm to operateion in buffered mode when rege input is low, in registered mode when rege input is high dqm0 ~ 7 data input/output mask controls output buffers in read mode and masks input data in write mode dq0 ~ dq63 data input/output multiplexed data input / output pin vcc power supply (3.3v) power supply fo r internal circuits and input buffers v ss ground ground scl spd clock input serial presence detect clock input sda spd data input/output serial presence detect data input/output sa0~2 spd address input serial presence detect address input wp write protect for spd write protect for serial presence detect on dimm id1~3 identification detect commend interval, read precharge timing, power detect nc no connection no connection
pc133 sdram registered dimm rev. 0.4/dec. 2002 3 hym72v12c736b(l)s4 series pin assignments front side back side front side back side pin no. name pin no. name pin no. name pin no. name 1 vss 85 vss 41 vcc 125 nc 2 dq0 86 dq32 42 ck0 126 a12 3 dq1 87 dq33 43 vss 127 vss 4 dq2 88 dq34 44 nc 128 cke0 5 dq3 89 dq35 45 /s2 129 /s3 6 vcc 90 vcc 46 dqm2 130 dqm6 7 dq4 91 dq36 47 dqm3 131 dqm7 8 dq5 92 dq37 48 nc 132 nc 9 dq6 93 dq38 49 vcc 133 vcc 10 dq7 94 dq39 50 nc 134 nc architecture key 51 nc 135 nc 52 cb2 136 cb6 11 dq8 95 dq40 53 cb3 137 cb7 12 vss 96 vss 54 vss 138 vss 13 dq9 97dq4155dq16139dq48 14 dq10 98 dq42 56 dq17 140 dq49 15 dq11 99 dq43 57 dq18 141 dq50 16 dq12 100 dq44 58 dq19 142 dq51 17 dq13 101 dq45 59 vcc 143 vcc 18 vcc 102 vcc 60 dq20 144 dq52 19 dq14 103 dq46 61 nc 145 nc 20 dq15 104 dq47 62 nc 146 nc 21 cb0 105 cb4 63 nc 147 rege 22 cb1 106 cb5 64 vss 148 vss 23 vss 107 vss 65 dq21 149 dq53 24 nc 108 nc 66 dq22 150 dq54 25 nc 109 nc 67 dq23 151 dq55 26 vcc 110 vcc 68 vcc 152 vcc 27 /we 111 /cas 69 dq24 153 dq56 28 dqm0 112 dqm4 70 dq25 154 dq57 29 dqm1 113 dqm5 71 dq26 155 dq58 30 /s0 114 /s1 72 dq27 156 dq59 31 nc 115 /ras 73 vcc 157 vcc 32 vss 116 vss 74 dq28 158 dq60 33 a0 117 a1 75 dq29 159 dq61 34 a2 118 a3 76 dq30 160 dq62 35 a4 119 a5 77 dq31 161 dq63 36 a6 120 a7 78 vss 162 vss 37 a8121a9 79ck2163*ck3 38 a10/ap 122 ba0 80 nc 164 nc 39 ba1 123 a11 81 wp 165 sa0 40 vcc 124 vcc 82 sda 166 sa1 voltage key 83 scl 167 sa2 84 vcc 168 vcc
pc133 sdram registered dimm rev. 0.4/dec. 2002 4 hym72v12c736b(l)s4 series block diagram
pc133 sdram registered dimm rev. 0.4/dec. 2002 6 hym72v12c736b(l)s4 series serial presence detect byte number function description function value note -k -h -k -h byte0 # of bytes written into serial memory at module manufacturer 128 bytes 80h byte1 total # of bytes of spd memory device 256 bytes 08h byte2 fundamental memory type sdram 04h byte3 # of row addresses on this assembly 13 0dh 1 byte4 # of column addres ses on this assembly 11 0bh byte5 # of module banks on this assembly 2 bank 02h byte6 data width of this assembly 72 bits 48h byte7 data width of this assembly (continued) - 00h byte8 voltage interface standard of this assembly lvttl 01h byte9 sdram cycle time @/ cas latency=3 7.5ns 7.5ns 75h 75h byte10 access time from cloc k @/cas latency=3 5.4ns 5.4ns 54h 54h byte11 dimm configuration type ecc 02h byte12 refresh rate/type 7.8125us / self refresh supported 82h byte13 primary sdram width x4 04h byte14 error checking sdram width x4 04h byte15 minimum clock delay back to back random col- umn address tccd = 1 clk 01h byte16 burst lenth supported 1,2,4,8,full page 8fh 2 byte17 # of banks on each sdram device 4 banks 04h byte18 sdram device attributes, /cas lataency /cas latency=2,3 06h byte19 sdram device attribut es, /cs lataency /cs latency=0 01h byte20 sdram device attribut es, /we lataency /we latency=0 01h byte21 sdram module attrib utes registered/buffered inputs, with pll 1fh byte22 sdram device attributes, general +/- 10% voltage tolerence, burst read single bit write, precharge all, auto precharge, early ras precharge 0eh byte23 sdram cycle time @/cas latency=2 7.5ns 10ns 75h a0h byte24 access time from clock @/cas latency=2 5.7ns 6ns 54h 60h byte25 sdram cycle ti me @/cas latency=1 - - 00h 00h byte26 access time from clock @/cas latency=1 - - 00h 00h byte27 minimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras puls e width (tras) 45ns 45ns 2dh 2dh byte31 module bank density 512mb 80h byte32 command and address signal input setup time 1.5ns 1.5ns 15h 15h byte33 command and address signal input hold time 0.8ns 0.8ns 08h 08h byte34 data signal input setup time 1.5ns 1.5ns 15h 15h byte35 data signal input hold time 0.8ns 0.8ns 08h 08h byte36 ~61 superset information (may be used in future) - 00h byte62 spd revision intel spd 1.2b 12h 3, 8 byte63 checksum for byte 0~62 - ddh 1eh byte64 manufacturer jedec id code hynix jeded id adh byte65 ~71 ....manufacturer jedec id code unused ffh
byte72 manufacturing location hynix (korea area) hsa (united states area) hse (europe area) hej (japan area) hss(singapore) asia area 0*h 1*h 2*h 3*h 4*h 5*h 9 byte number function description function value note -k -h -k -h
pc133 sdram registered dimm rev. 0.4/dec. 2002 8 hym72v12c736b(l)s4 series note : 1. the bank address is excluded 2. 1, 2, 4, 8 for interleave burst type 3. bcd adopted 4. ascii adopted 5. basically hynix writes part no. except for ?hym? in byte 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. not fixed but dependent 7. ck0 connected to dimm, tbd junction temp, cl2(3) su pport, intel defined concurr ent auto precharge support 8. refer to the most recent intel and jedec spd specification 9. these values are applied to pc100 applicat ions only per intel pc sdram specification byte 83~ 85 for low power part byte number function description function value not e -k -h -k -h byte73 manufacturer?s part number (component) 7 (sdram) 37h 4, 5 byte74 manufacturer?s part number (256mb based) 2 32h 4, 5 byte75 manufacturer?s part number (voltage interface) v (3.3v, lvttl) 56h 4, 5 byte76 manufacturer?s part number (memory width) 1 31h 4, 5 byte77 ....manufacturer?s part number (memory width) 2 32h 4, 5 byte78 manufacturer?s part number (module type) c 43h 4, 5 byte79 manufacturer?s part number (data width) 7 37h 4, 5 byte80 ....manufacturer?s part number (data width) 3 33h 4, 5 byte81 manufacturer?s part number (refresh, sdram bank) 6 (8k refresh, 4banks) 36h 4, 5 byte82 manufacturer?s part number(manufacturing site) b 42h 4, 5 byte83 manufacturer?s part number (package type) s 53h 4, 5 byte84 manufacturer?s part number (component configuration) 4 (x4 based) 34h 4, 5 byte85 manufacturer?s part number (hyphent) - (hyphen) 2dh 4, 5 byte86 manufacturer?s part number (min. cycle time) k h 4bh 48h 4, 5 byte86 ~90 manufacturer?s part number blanks 20h 4, 5 byte91 revision code (for component) process code - 4, 6 byte92 ....revision code (for pcb) process code - 4, 6 byte93 manufacturing date year - 3, 6 byte94 ....manufacturing date work week - 3, 6 byte95 ~98 assembly serial number serial number - 6 byte99 ~125 manufacturer specific data (may be used in future) none 00h byte126 system frequency support refer to note 7 64h 7, 8 byte127 intel specification details for 100mhz support refer to note7 8fh 8fh 7, 8 byte128 ~256 unused storage locations - 00h byte number function description function value note -k -h -k -h byte83 manufacturer?s part number (power) l4ch4, 5 byte84 manufacturer?s part number (package type) s 53h 4, 5 byte85 manufacturer?s part number (component configuration) 4 (x4 based) 34h 4, 5 continued
pc133 sdram registered dimm rev. 0.4/dec. 2002 9 hym72v12c736b(l)s4 series absolute maximum ratings note : operation at above absolute maximum rating can adversely affect device reliability. dc operating condition (t a =0 to 70 c ) note : 1.all voltages are referenced to v ss = 0v 2.v ih (max) is acceptable 5.6v ac pulse width with <=3ns of duration. 3.v il (min) is acceptable -2.0v ac pulse width with <=3ns of duration. ac operating test condition (t a =0 to 70 c , v dd =3.3 0.3v, v ss =0v) note : 1.output load to measure access times is equivalent to two tt l gates and one capacitor (50pf). for details, refer to ac/dc outp ut load circuit parameter symbol rating unit ambient temperature t a 0 ~ 70 c storage temperature t stg -55 ~ 125 c voltage on any pin relative to v ss v in , v out -1.0 ~ 4.6 v voltage on v dd relative to v ss v dd, v ddq -1.0 ~ 4.6 v short circuit output current i os 50 ma power dissipation p d 1w soldering temperature ? time t solder 260 ? 10 c ? sec parameter symbol min typ max unit note power supply voltage v dd , v ddq 3.0 3.3 3.6 v 1 input high voltage v ih 2.0 3.0 v ddq + 0.3 v 1,2 input low voltage v il -0.3 0 0.8 v 1,3 parameter symbol value unit note ac input high / low level voltage v ih / v il 2.4/0.4 v input timing measurement reference level voltage vtrip 1.4 v input rise / fall time tr / tf 1 ns output timing measurement reference level voltage voutref 1.4 v output load capacitance for access time measurement c l 50 pf 1
pc133 sdram registered dimm rev. 0.4/dec. 2002 10 hym72v12c736b(l)s4 series capacitance (ta=25 c , f=1mhz) output load circuit parameter pin symbol -k/h unit min max input capacitance ck0 c i1 -20pf cke0 c i2 -20pf /s0, /s1, /s2, /s3 c i3 -20pf a0~12, ba0, ba1 c i4 -20pf /ras, /cas, /we c i5 -20pf dqm0~dqm7 ci 6 -20pf data input / output capacitance dq0 ~ dq63 c i/o -20pf vtt=1.4v rt=250 ? 50pf output 50pf output dc output load circuit ac output load circuit
pc133 sdram registered dimm rev. 0.4/dec. 2002 11 hym72v12c736b(l)s4 series dc characteristics i (ta=0 to 70 c , v dd =3.3 0.3v) note : 1.v in = 0 to 3.6v, all other pins are not tested under v in =0v 2.d out is disabled, v out =0 to 3.6 dc characteristics ii note : 1. i dd1 and i dd4 depend on output loading and cycle rates. specified values are measured with the output open 2. min. of trrc (refresh ras cycle ti me) is shown at ac characteristics ii 3. hym72v12c736bs4 - k/h 4. hym72v12c736bls4 - k/h parameter symbol min. max unit note input leakage current i li -10 10 ua 1 output leakage current i lo -1 1 ua 2 output high voltage v oh 2.4 - v i oh = -4ma output low voltage v ol -0.4vi ol = +4ma parameter symbol test condition speed unit note -k -h operating current i dd1 burst length=1, one bank active t rc t rc (min), i ol =0ma 2760 ma 1 precharge standby current in power down mode i dd2p cke v il (max), t ck = min 420 ma i dd2ps cke v il (max), t ck = 76 precharge standby current in non power down mode i dd2n cke v ih (min), cs v ih (min), t ck = min input signals are changed one time during 2clks. all other pins v dd -0.2v or 0.2v 1100 ma i dd2ns cke v ih (min), t ck = input signals are stable. 360 active standby current in power down mode i dd3p cke v il (max), t ck = min 282 ma i dd3ps cke v il (max), t ck = 108 active standby current in non power down mode i dd3n cke v ih (min), cs v ih (min), t ck = min input signals are changed one time during 2clks. all other pins v dd -0.2v or 0.2v 1020 ma i dd3ns cke v ih (min), t ck = input signals are stable. 450 ma burst mode operating current i dd4 t ck t ck (min), i ol =0ma all banks active 3500 ma 1 auto refresh current i dd5 t rrc t rrc (min), all banks active 4800 ma 2 self refresh current i dd6 cke 0.2v normal 550 ma 3 low power 156 ma 4
pc133 sdram registered dimm rev. 0.4/dec. 2002 12 hym72v12c736b(l)s4 series ac characteristics i (ac operating conditions unless otherwise noted) note : 1. in registered dimm, data is delayed an additional clock cycl e due to the register (this is, device cl + 1 = dimm cl) 2.assume tr / tf (input rise and fall time ) is 1ns, if tr & tf > 1ns, then [(tr+tf)/2-1]ns should be added to the parameter 3.access times to be measured with input signal s of 1v/ns edge rate, from 0.8v to 2.0v if tr > 1ns, then (tr/2-0.5)ns should be added to the parameter parameter symbol -k -h unit note min max min max system clock cycle time cas latency = 3 tck3 7.5 1000 7.5 1000 ns cas latency = 2 tck2 7.5 10 ns clock high pulse width tchw 2.5 - 2.5 - ns 1 clock low pulse width tclw 2.5 - 2.5 - ns 1 access time from clock cas latency = 3 tac3 - 5.4 - 5.4 ns 2 cas latency = 2 tac2 - 5.4 - 6 ns data-out hold time toh 2.7 - 2.7 - ns data-input setup time tds 1.5 - 1.5 - ns 1 data-input hold time tdh 0.8 - 0.8 - ns 1 address setup time tas 1.5 - 1.5 - ns 1 address hold time tah 0.8 - 0.8 - ns 1 cke setup time tcks 1.5 - 1.5 - ns 1 cke hold time tckh 0.8 - 0.8 - ns 1 command setup time tcs 1.5 - 1.5 - ns 1 command hold time tch 0.8 - 0.8 - ns 1 clk to data output in low-z time tolz 1 - 1 - ns clk to data output in high-z time cas latency = 3 tohz3 2.7 5.4 2.7 5.4 ns cas latency = 2 tohz2 2.7 5.4 3 6 ns
pc133 sdram registered dimm rev. 0.4/dec. 2002 13 hym72v12c736b(l)s4 series ac characteristics ii note : 1. timing delay due to the register is considered in a registered dimm 2. a new command can be given trrc after self refresh exit parameter symbol -k -h unit note min max min max ras cycle time operation trc 60 - 65 - ns auto refresh trrc 60 - 65 - ns ras to cas delay trcd 15 - 20 - ns ras active time tras 45 100k 45 100k ns ras precharge time trp 15 - 20 - ns ras to ras bank active delay trrd 15 - 15 - ns cas to cas delay tccd 1 - 1 - clk write command to data-in delay twtl 0 - 0 - clk data-in to precharge command tdpl 2 - 2 - clk data-in to active command tdal 5 - 5 - clk dqm to data-out hi-z tdqz 2 - 2 - clk dqm to data-in mask tdqm 0 - 0 - clk mrs to new command tmrd 2 - 2 - clk precharge to data output hi-z cas latency = 3 tproz3 3 - 3 - clk cas latency = 2 tproz2 2 - 2 - clk power down exit time tpde 1 - 1 - clk self refresh exit time tsre 1 - 1 - clk 1 refresh time tref - 64 - 64 ms
pc133 sdram registered dimm rev. 0.4/dec. 2002 14 hym72v12c736b(l)s4 series device operating option table hym72v12c736b(l)s4-k hym72v12c736b(l)s4-h note : dimm/cas latency = device cl + 1 (registered mode) cas latency trcd tras trc trp tac toh 133mhz(7.5ns) 2clks 2clks 6clks 8clks 2clks 5.4ns 2.7ns 125mhz(8ns) 2clks 3clks 6clks 9clks 3clks 6ns 3ns 100mhz(10ns) 2clks 2clks 5clks 7clks 2clks 6ns 3ns cas latency trcd tras trc trp tac toh 133mhz(7.5ns) 3clks 3clks 6clks 9clks 3clks 5.4ns 2.7ns 125mhz(8ns) 3clks 3clks 6clks 9clks 3clks 6ns 3ns 100mhz(10ns) 3clks 2clks 5clks 7clks 2clks 6ns 3ns
pc133 sdram registered dimm rev. 0.4/dec. 2002 15 hym72v12c736b(l)s4 series command truth table note : 1. exiting self refresh occurs by asyn chronously bringing cke from low to high 2. x = don t care, h = logic high, l = logic low. ba =bank address, ra = row address, ca = column address, opcode = operand code, nop = no operation command cken-1 cken cs ras cas we dqm addr a10/ ap ba note mode register set h x l l l l x op code no operation h x hxxx xx lhhh bank active h x l l h h x ra v read hxlhlhxca l v read with autoprecharge h write hxlhllxca l v write with autoprecharge h precharge all banks hxllhlxx hx precharge selected bank lv burst stop h x l h h l x x dqm h x v x auto refresh h h l l l h x x burst-read-single- write h x lllhx a9 pin high (other pins op code) self refresh 1 entry h l lllhx x exit l h hxxx x lhhh precharge power down entry h l hxxx x x lhhh exit l h hxxx x lhhh clock suspend entry h l hxxx x x lvvv exit l h x x
pc133 sdram registered dimm rev. 0.4/dec. 2002 16 hym72v12c736b(l)s4 series package demension 6.5 max 1.27 127.35 133.35 3.00 r 2.00 3.00 43.18 4.00 15.78 3.00+/-0.10 dia 115.57 8.89 43.18 6.35 r1.00+/-0.05 3.18 3.18 1.27 3.00min 3.25max 0.99 0.05mm 2.54min 0.25max 4.00 min

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